Paper Title:
SiC Vertical DACFET (Vertical Delta-Doped Accumulation Channel MOSFET)
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1211-1214
DOI
10.4028/www.scientific.net/MSF.389-393.1211
Citation
O. Kusumoto, T. Yokogawa, K. Yamashita, K. Takahashi, M. Kitabatake, M. Uchida, R. Miyanaga, "SiC Vertical DACFET (Vertical Delta-Doped Accumulation Channel MOSFET)", Materials Science Forum, Vols. 389-393, pp. 1211-1214, 2002
Online since
April 2002
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Price
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