Paper Title:
A Novel High-Voltage Normally-Off 4H-SiC Vertical JFET
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1223-1226
DOI
10.4028/www.scientific.net/MSF.389-393.1223
Citation
J. H. Zhao, L. X. Li, K. Tone, P. Alexandrov, M. Pan, M. Weiner, "A Novel High-Voltage Normally-Off 4H-SiC Vertical JFET", Materials Science Forum, Vols. 389-393, pp. 1223-1226, 2002
Online since
April 2002
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Price
$32.00
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