2 kV 4H-SiC Junction FETs |
| Journal |
Materials Science Forum (Volumes 389 - 393) |
| Volume |
Silicon Carbide and Related Materials 2001 |
| Edited by |
S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages |
1227-1230 |
| DOI |
10.4028/www.scientific.net/MSF.389-393.1227 |
| Citation |
Hidekatsu Onose et al., 2002, Materials Science Forum, 389-393, 1227 |
| Authors |
Hidekatsu Onose, Atsuo Watanabe, Tomoyuki Someya, Yutaka Kobayashi |
| Keywords |
High Voltage, JFET, On-State Resistance, Silicon Carbide (SiC), SIT |
| Full Paper |
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