Paper Title:
2 kV 4H-SiC Junction FETs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1227-1230
DOI
10.4028/www.scientific.net/MSF.389-393.1227
Citation
H. Onose, A. Watanabe, T. Someya, Y. Kobayashi, "2 kV 4H-SiC Junction FETs", Materials Science Forum, Vols. 389-393, pp. 1227-1230, 2002
Online since
April 2002
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Price
$32.00
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