Paper Title:
Design and Processing of High-Voltage 4H-SiC Trench Junction Field-Effect Transistor
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1231-1234
DOI
10.4028/www.scientific.net/MSF.389-393.1231
Citation
L. Zhu, T. P. Chow, "Design and Processing of High-Voltage 4H-SiC Trench Junction Field-Effect Transistor", Materials Science Forum, Vols. 389-393, pp. 1231-1234, 2002
Online since
April 2002
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Price
$32.00
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