Paper Title:
Influence of Trenching Effect on the Characteristics of Buried-Gate SiC Junction Field-Effect Transistors
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1235-1238
DOI
10.4028/www.scientific.net/MSF.389-393.1235
Citation
S.-M. Koo, S. K. Lee, C. M. Zetterling, M. Östling, U. Forsberg, E. Janzén, "Influence of Trenching Effect on the Characteristics of Buried-Gate SiC Junction Field-Effect Transistors", Materials Science Forum, Vols. 389-393, pp. 1235-1238, 2002
Online since
April 2002
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Price
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