Paper Title:
Silicon/Oxide/Silicon Carbide (SiOSiC) - A New Approach to High-Voltage, High-Frequency Integrated Circuits
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1255-1258
DOI
10.4028/www.scientific.net/MSF.389-393.1255
Citation
F. Udrea, A. Mihaila, R. Azar, "Silicon/Oxide/Silicon Carbide (SiOSiC) - A New Approach to High-Voltage, High-Frequency Integrated Circuits", Materials Science Forum, Vols. 389-393, pp. 1255-1258, 2002
Online since
April 2002
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Price
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