Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth |
| Journal |
Materials Science Forum (Volumes 389 - 393) |
| Volume |
Silicon Carbide and Related Materials 2001 |
| Edited by |
S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages |
127-130 |
| DOI |
10.4028/www.scientific.net/MSF.389-393.127 |
| Citation |
Matthias Bickermann et al., 2002, Materials Science Forum, 389-393, 127 |
| Authors |
Matthias Bickermann, Roland Weingärtner, Dieter Hofmann, Thomas L. Straubinger, Albrecht Winnacker |
| Keywords |
Boron Doping, Bulk Growth, Compensation, Dopant Incorporation, Hall-Effect, Impurity Incorporation, Segregation |
| Full Paper |
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