Paper Title:
Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
127-130
DOI
10.4028/www.scientific.net/MSF.389-393.127
Citation
M. Bickermann, R. Weingärtner, D. Hofmann, T. L. Straubinger, A. Winnacker, "Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth", Materials Science Forum, Vols. 389-393, pp. 127-130, 2002
Online since
April 2002
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Price
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