Paper Title:
High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1273-1276
DOI
10.4028/www.scientific.net/MSF.389-393.1273
Citation
Y. Negoro, N. Miyamoto, T. Kimoto, H. Matsunami, "High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation", Materials Science Forum, Vols. 389-393, pp. 1273-1276, 2002
Online since
April 2002
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