Paper Title:
Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1281-1284
DOI
10.4028/www.scientific.net/MSF.389-393.1281
Citation
J. Q. Liu, M. Skowronski, C. Hallin, R. Söderholm, H. Lendenmann, "Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes", Materials Science Forum, Vols. 389-393, pp. 1281-1284, 2002
Online since
April 2002
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