Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method |
| Journal |
Materials Science Forum (Volumes 389 - 393) |
| Volume |
Silicon Carbide and Related Materials 2001 |
| Edited by |
S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages |
131-134 |
| DOI |
10.4028/www.scientific.net/MSF.389-393.131 |
| Citation |
Thomas L. Straubinger et al., 2002, Materials Science Forum, 389-393, 131 |
| Authors |
Thomas L. Straubinger, Matthias Bickermann, Michael Rasp, Roland Weingärtner, Peter J. Wellmann, Albrecht Winnacker |
| Keywords |
Aluminum Doping, Bulk Growth, Modified-PVT, Silicon Carbide (SiC) |
| Full Paper |
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