Paper Title:
Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
131-134
DOI
10.4028/www.scientific.net/MSF.389-393.131
Citation
T. L. Straubinger, M. Bickermann, M. Rasp, R. Weingärtner, P. J. Wellmann, A. Winnacker, "Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method", Materials Science Forum, Vols. 389-393, pp. 131-134, 2002
Online since
April 2002
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