Paper Title:
Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method
  Abstract

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Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1313-1316
DOI
10.4028/www.scientific.net/MSF.389-393.1313
Citation
N.I. Kuznetsov, D. Bauman, A. Gavrilin, E. V. Kalinina, "Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method", Materials Science Forum, Vols. 389-393, pp. 1313-1316, 2002
Online since
April 2002
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Price
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