All-SiC Inductively-Loaded Half-Bridge Inverter Characterization of 4H-SiC Power BJTs up to 400V/22 A |
| Journal |
Materials Science Forum (Volumes 389 - 393) |
| Volume |
Silicon Carbide and Related Materials 2001 |
| Edited by |
S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages |
1325-1328 |
| DOI |
10.4028/www.scientific.net/MSF.389-393.1325 |
| Citation |
Yan Bin Luo et al., 2002, Materials Science Forum, 389-393, 1325 |
| Authors |
Yan Bin Luo, Leonid Fursin, Jian H. Zhao, Petre Alexandrov, B. Wright, M. Weiner |
| Keywords |
Fabrication, Half-Bridge Inverter, Power Transistor, Silicon Carbide (SiC) |
| Full Paper |
Get the full paper by clicking here
|
