Paper Title:
Improvement and Analysis of Implanted-Emitter Bipolar Junction Transistors in 4H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1329-1332
DOI
10.4028/www.scientific.net/MSF.389-393.1329
Citation
Y. Tang, J. B. Fedison, T. P. Chow, "Improvement and Analysis of Implanted-Emitter Bipolar Junction Transistors in 4H-SiC", Materials Science Forum, Vols. 389-393, pp. 1329-1332, 2002
Online since
April 2002
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