Paper Title:
On the Temperature Coefficient of 4H-SiC npn Transistor Current Gain
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1333-1336
DOI
10.4028/www.scientific.net/MSF.389-393.1333
Citation
L. X. Li, Y. B. Luo, J. H. Zhao, P. Alexandrov, M. Pan, M. Weiner, "On the Temperature Coefficient of 4H-SiC npn Transistor Current Gain", Materials Science Forum, Vols. 389-393, pp. 1333-1336, 2002
Online since
April 2002
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Price
$32.00
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