Paper Title:
Investigation of Thermal Properties in Fabricated 4H-SiC High-Power Bipolar Transistors
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1337-1340
DOI
10.4028/www.scientific.net/MSF.389-393.1337
Citation
E. Danielsson, C. M. Zetterling, M. Östling, U. Forsberg, E. Janzén, "Investigation of Thermal Properties in Fabricated 4H-SiC High-Power Bipolar Transistors", Materials Science Forum, Vols. 389-393, pp. 1337-1340, 2002
Online since
April 2002
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Price
$32.00
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