Paper Title:
Hybrid MOS-Gated Bipolar Transistor Using 4H-SiC BJT
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1341-1344
DOI
10.4028/www.scientific.net/MSF.389-393.1341
Citation
Y. Tang, T. P. Chow, A. K. Agarwal, S. H. Ryu, J. W. Palmour, "Hybrid MOS-Gated Bipolar Transistor Using 4H-SiC BJT", Materials Science Forum, Vols. 389-393, pp. 1341-1344, 2002
Online since
April 2002
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Price
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