Paper Title:
Development and Demonstration of High-Power X-Band SiC MESFETs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1367-1370
DOI
10.4028/www.scientific.net/MSF.389-393.1367
Citation
H.R. Chang, E. Hanna, J. Hacker, R. Hackett, C. Bui, "Development and Demonstration of High-Power X-Band SiC MESFETs", Materials Science Forum, Vols. 389-393, pp. 1367-1370, 2002
Online since
April 2002
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Price
$32.00
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