Paper Title:
Influence of Gate Finger Width on RF Characteristics of 4H-SiC MESFET
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1379-1382
DOI
10.4028/www.scientific.net/MSF.389-393.1379
Citation
M. Arai, H. Honda, M. Ogata, H. Sawazaki, S. Ono, "Influence of Gate Finger Width on RF Characteristics of 4H-SiC MESFET", Materials Science Forum, Vols. 389-393, pp. 1379-1382, 2002
Online since
April 2002
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.