Paper Title:
The Development of Ultra-High Frequency Power 6H-SiC Vertical Static Induction Transistor with p-n Junction as a Gate
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1407-1410
DOI
10.4028/www.scientific.net/MSF.389-393.1407
Citation
V. I. Sankin, P. P. Shkrebiy, A. N. Kuznetsov, N.S. Savkina, "The Development of Ultra-High Frequency Power 6H-SiC Vertical Static Induction Transistor with p-n Junction as a Gate", Materials Science Forum, Vols. 389-393, pp. 1407-1410, 2002
Online since
April 2002
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