Paper Title:
The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1419-1422
DOI
10.4028/www.scientific.net/MSF.389-393.1419
Citation
L. Unéus, S. Nakagomi, M. K. Linnarsson, M. S. Janson, B. G. Svensson, R. Yakimova, M. Syväjärvi, A. Henry, E. Janzén, L.-G. Ekedahl, I. Lundström, A. Lloyd Spetz, "The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures", Materials Science Forum, Vols. 389-393, pp. 1419-1422, 2002
Online since
April 2002
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