Paper Title:
Influence of Epitaxial Layer on SiC Schottky Diode Gas Sensors Operated under High-Temperature Conditions
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1423-1426
DOI
10.4028/www.scientific.net/MSF.389-393.1423
Citation
S. Nakagomi, H. Shinobu, L. Unéus, I. Lundström, L.-G. Ekedahl, R. Yakimova, M. Syväjärvi, A. Henry, E. Janzén, A. Lloyd Spetz, "Influence of Epitaxial Layer on SiC Schottky Diode Gas Sensors Operated under High-Temperature Conditions", Materials Science Forum, Vols. 389-393, pp. 1423-1426, 2002
Online since
April 2002
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Price
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