Paper Title:
GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1473-1476
DOI
10.4028/www.scientific.net/MSF.389-393.1473
Citation
M. A. Mastro, O. Kryliouk, T. Dann, T.J. Anderson, A.E. Nikolaev, Y.V. Melnik, V. Dmitriev, "GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates", Materials Science Forum, Vols. 389-393, pp. 1473-1476, 2002
Online since
April 2002
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Price
$32.00
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