Paper Title:
Growth and Characterization of GaGdN and AlGdN on SiC by RF-MBE
  Abstract

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Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1477-1480
DOI
10.4028/www.scientific.net/MSF.389-393.1477
Citation
N. Teraguchi, A. Suzuki, Y. Nanishi, "Growth and Characterization of GaGdN and AlGdN on SiC by RF-MBE", Materials Science Forum, Vols. 389-393, pp. 1477-1480, 2002
Online since
April 2002
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