Recent Progress of AlGaN/GaN Heterojunction FETs for Microwave Power Applications |
| Journal |
Materials Science Forum (Volumes 389 - 393) |
| Volume |
Silicon Carbide and Related Materials 2001 |
| Edited by |
S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages |
1505-1510 |
| DOI |
10.4028/www.scientific.net/MSF.389-393.1505 |
| Citation |
Hironobu Miyamoto, 2002, Materials Science Forum, 389-393, 1505 |
| Authors |
Hironobu Miyamoto |
| Keywords |
AlGaN, FET, Galium Nitride (GaN), Heterojunction, Passivation, Power Device, Sapphire Substrate |
| Full Paper |
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