QuaSiC Smart-Cut Substrates for SiC High Power Devices |
| Journal |
Materials Science Forum (Volumes 389 - 393) |
| Volume |
Silicon Carbide and Related Materials 2001 |
| Edited by |
S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages |
151-154 |
| DOI |
10.4028/www.scientific.net/MSF.389-393.151 |
| Citation |
Fabrice Letertre et al., 2002, Materials Science Forum, 389-393, 151 |
| Authors |
Fabrice Letertre, E. Jalaguier, Lea Di Cioccio, Francois Templier, Jean Marie Bluet, C. Banc, Igor Matko, Bernard Chenevier, Edwige Bano, Gérard Guillot, Thierry Billon, B. Aspar, Roland Madar, B. Ghyselen |
| Keywords |
4H-SiC, SiC CVD Epitaxy, Smart-Cut®, Tungsten Silicide, Wafer Bonding |
| Full Paper |
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