Paper Title:
High Performance AlGaN/GaN HEMTs with Recessed Gate
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1511-1514
DOI
10.4028/www.scientific.net/MSF.389-393.1511
Citation
Y. Sano, J. Mita, T. Yamada, T. Makita, K. Kaifu, H. Ishikawa, T. Egawa, T. Jimbo, "High Performance AlGaN/GaN HEMTs with Recessed Gate", Materials Science Forum, Vols. 389-393, pp. 1511-1514, 2002
Online since
April 2002
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.