Paper Title:
Thermal Analysis of GaN-Based HFET Devices Using the Unit Thermal Profile Approach
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1523-1526
DOI
10.4028/www.scientific.net/MSF.389-393.1523
Citation
J. Park, C. C. Lee, J. W. Kim, J. S. Lee, W. S. Lee, J.-H. Shin, M. W. Shin, "Thermal Analysis of GaN-Based HFET Devices Using the Unit Thermal Profile Approach", Materials Science Forum, Vols. 389-393, pp. 1523-1526, 2002
Online since
April 2002
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