Paper Title:

AlGaN/GaN Hetero Field-Effect Transistor for a Large Current Operation

Periodical Materials Science Forum (Volumes 389 - 393)
Main Theme Silicon Carbide and Related Materials 2001
Edited by S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages 1527-1530
DOI 10.4028/www.scientific.net/MSF.389-393.1527
Citation Seikoh Yoshida et al., 2002, Materials Science Forum, 389-393, 1527
Authors Seikoh Yoshida, Hirotatsu Ishii, Jiang Li
Keywords AlGaN, Breakdown Voltage, Galium Nitride (GaN), HFET, Mobility, On-State Resistance, Transconductance
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