Paper Title:
AlGaN/GaN Hetero Field-Effect Transistor for a Large Current Operation
| Periodical |
Materials Science Forum (Volumes 389 - 393)
|
| Main Theme |
Silicon Carbide and Related Materials 2001
|
| Edited by |
S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages |
1527-1530 |
| DOI |
10.4028/www.scientific.net/MSF.389-393.1527 |
| Citation |
Seikoh Yoshida et al., 2002, Materials Science Forum, 389-393, 1527 |
| Authors |
Seikoh Yoshida, Hirotatsu Ishii, Jiang Li |
| Keywords |
AlGaN, Breakdown Voltage, Galium Nitride (GaN), HFET, Mobility, On-State Resistance, Transconductance |
| Price |
US$ 28,- |