Gallium Nitride Metal-Insulator-Semiconductor Capacitors Using Low-Pressure Chemical Vapor Deposited Oxides |
| Journal |
Materials Science Forum (Volumes 389 - 393) |
| Volume |
Silicon Carbide and Related Materials 2001 |
| Edited by |
S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages |
1535-0 |
| DOI |
10.4028/www.scientific.net/MSF.389-393.1535 |
| Citation |
Kevin Matocha et al., 2002, Materials Science Forum, 389-393, 1535 |
| Authors |
Kevin Matocha, T. Paul Chow, Ronald J. Gutmann |
| Keywords |
Capacitors, Conductance Technique, Interface-State Density, LPCVD Oxides, MIS, MOS |
| Full Paper |
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