Paper Title:
High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
179-182
DOI
10.4028/www.scientific.net/MSF.389-393.179
Citation
K. Masahara, T. Takahashi, M. Kushibe, T. Ohno, J. Nishio, K. Kojima, Y. Ishida, T. Suzuki, T. Tanaka, S. Yoshida, K. Arai, "High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor", Materials Science Forum, Vols. 389-393, pp. 179-182, 2002
Online since
April 2002
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