Paper Title:

High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor

Periodical Materials Science Forum (Volumes 389 - 393)
Main Theme Silicon Carbide and Related Materials 2001
Edited by S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages 179-182
DOI 10.4028/www.scientific.net/MSF.389-393.179
Citation Koh Masahara et al., 2002, Materials Science Forum, 389-393, 179
Authors Koh Masahara, Tetsuo Takahashi, Mitsuhiro Kushibe, Takaya Ohno, Johji Nishio, Kazutoshi Kojima, Yuuki Ishida, Takaya Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai
Keywords Growth Rate, Hot-Wall CVD, Hydrogen Etching
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