Paper Title:
High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor
| Periodical |
Materials Science Forum (Volumes 389 - 393)
|
| Main Theme |
Silicon Carbide and Related Materials 2001
|
| Edited by |
S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages |
179-182 |
| DOI |
10.4028/www.scientific.net/MSF.389-393.179 |
| Citation |
Koh Masahara et al., 2002, Materials Science Forum, 389-393, 179 |
| Authors |
Koh Masahara, Tetsuo Takahashi, Mitsuhiro Kushibe, Takaya Ohno, Johji Nishio, Kazutoshi Kojima, Yuuki Ishida, Takaya Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai |
| Keywords |
Growth Rate, Hot-Wall CVD, Hydrogen Etching |
| Price |
US$ 28,- |