Paper Title:
Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
183-186
DOI
10.4028/www.scientific.net/MSF.389-393.183
Citation
S. Nakamura, T. Kimoto, H. Matsunami, "Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition", Materials Science Forum, Vols. 389-393, pp. 183-186, 2002
Online since
April 2002
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Price
$32.00
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