Paper Title:
Highly Uniform Epitaxial SiC-Layers Grown in a Hot-Wall CVD Reactor with Mechanical Rotation
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
187-190
DOI
10.4028/www.scientific.net/MSF.389-393.187
Citation
A. Schöner, A. O. Konstantinov, S. Karlsson, R. Berge, "Highly Uniform Epitaxial SiC-Layers Grown in a Hot-Wall CVD Reactor with Mechanical Rotation", Materials Science Forum, Vols. 389-393, pp. 187-190, 2002
Online since
April 2002
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