Paper Title:
Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
191-194
DOI
10.4028/www.scientific.net/MSF.389-393.191
Citation
J. Zhang, U. Forsberg, M. Isacson, A. Ellison, A. Henry, O. Kordina, E. Janzén, "Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation", Materials Science Forum, Vols. 389-393, pp. 191-194, 2002
Online since
April 2002
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Price
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