Paper Title:
Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
195-198
DOI
10.4028/www.scientific.net/MSF.389-393.195
Citation
K. Kojima, T. Ohno, J. Senzaki, K. Fukuda, T. Fujimoto, M. Katsuno, N. Ohtani, J. Nishio, K. Masahara, Y. Ishida, T. Takahashi, T. Suzuki, T. Tanaka, S. Yoshida, K. Arai, "Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction", Materials Science Forum, Vols. 389-393, pp. 195-198, 2002
Online since
April 2002
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