Paper Title:
Hot-Wall CVD Growth of 4H-SiC Using Si2Cl6+C3H8+H2 System
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
199-202
DOI
10.4028/www.scientific.net/MSF.389-393.199
Citation
T. Miyanagi, S. Nishino, "Hot-Wall CVD Growth of 4H-SiC Using Si2Cl6+C3H8+H2 System", Materials Science Forum, Vols. 389-393, pp. 199-202, 2002
Online since
April 2002
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Price
$32.00
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