Paper Title:
Aluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process Parameters
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
203-206
DOI
10.4028/www.scientific.net/MSF.389-393.203
Citation
U. Forsberg, Ö. Danielsson, A. Henry, M. K. Linnarsson, E. Janzén, "Aluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process Parameters", Materials Science Forum, Vols. 389-393, pp. 203-206, 2002
Online since
April 2002
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