Paper Title:
Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
207-210
DOI
10.4028/www.scientific.net/MSF.389-393.207
Citation
G. Wagner, W. Leitenberger, K. Irmscher, F. Schmid, M. Laube, G. Pensl, "Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System", Materials Science Forum, Vols. 389-393, pp. 207-210, 2002
Online since
April 2002
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