Paper Title:
Vapor-Phase Epitaxial Growth of n-Type SiC Using Phosphine as the Precursor
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
211-214
DOI
10.4028/www.scientific.net/MSF.389-393.211
Citation
R. J. Wang, I. Bhat, T. P. Chow, "Vapor-Phase Epitaxial Growth of n-Type SiC Using Phosphine as the Precursor", Materials Science Forum, Vols. 389-393, pp. 211-214, 2002
Online since
April 2002
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Price
$32.00
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