Paper Title:
Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
215-218
DOI
10.4028/www.scientific.net/MSF.389-393.215
Citation
J. Nishio, M. Kushibe, K. Masahara, K. Kojima, T. Ohno, Y. Ishida, T. Takahashi, T. Suzuki, T. Tanaka, S. Yoshida, K. Arai, "Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition", Materials Science Forum, Vols. 389-393, pp. 215-218, 2002
Online since
April 2002
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.