Paper Title:
Predicting Growth Rates of SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
219-222
DOI
10.4028/www.scientific.net/MSF.389-393.219
Citation
Ö. Danielsson, S. Jönsson, A. Henry, E. Janzén, "Predicting Growth Rates of SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition", Materials Science Forum, Vols. 389-393, pp. 219-222, 2002
Online since
April 2002
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