Paper Title:
Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
223-226
DOI
10.4028/www.scientific.net/MSF.389-393.223
Citation
M. Pons, J. Mezière, S. W. T. Kuan, E. Blanquet, P. Ferret, L. Di Cioccio, T. Billon, R. Madar, "Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition", Materials Science Forum, Vols. 389-393, pp. 223-226, 2002
Online since
April 2002
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