Paper Title:
Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
227-230
DOI
10.4028/www.scientific.net/MSF.389-393.227
Citation
M. Hasegawa, A. Miyauchi, K. Masahara, Y. Ishida, T. Takahashi, T. Ohno, J. Nishio, T. Suzuki, T. Tanaka, S. Yoshida, K. Arai, "Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor", Materials Science Forum, Vols. 389-393, pp. 227-230, 2002
Online since
April 2002
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Price
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