Paper Title:
High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
23-28
DOI
10.4028/www.scientific.net/MSF.389-393.23
Citation
S. G. Müller, M.F. Brady, W.H. Brixius, G. Fechko, R.C. Glass, D. Henshall, H. McD. Hobgood, J. R. Jenny, R.T. Leonard, D.P. Malta, A. R. Powell, V. F. Tsvetkov, S.T. Allen, J. W. Palmour, C. H. Carter Jr., "High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production", Materials Science Forum, Vols. 389-393, pp. 23-28, 2002
Online since
April 2002
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Price
$32.00
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