High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production |
| Journal |
Materials Science Forum (Volumes 389 - 393) |
| Volume |
Silicon Carbide and Related Materials 2001 |
| Edited by |
S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages |
23-28 |
| DOI |
10.4028/www.scientific.net/MSF.389-393.23 |
| Citation |
Stephan G. Müller et al., 2002, Materials Science Forum, 389-393, 23 |
| Authors |
Stephan G. Müller, M.F. Brady, W.H. Brixius, G. Fechko, R.C. Glass, D. Henshall, H. McD. Hobgood, Jason R. Jenny, R.T. Leonard, D.P. Malta, Adrian R. Powell, Valeri F. Tsvetkov, S.T. Allen, John J. Palmour, Calvin H. Carter Jr. |
| Keywords |
Carbon Vacancy, DLTS, EPR, Micropipe, Resistivity, Semi-insulating (SI), Sublimation Growth, Thermal Conductivity (TC) |
| Full Paper |
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