Paper Title:
Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
231-234
DOI
10.4028/www.scientific.net/MSF.389-393.231
Citation
S. Y. Ha, P. Mieszkowski, L.B. Rowland, M. Skowronski, "Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers", Materials Science Forum, Vols. 389-393, pp. 231-234, 2002
Online since
April 2002
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