Paper Title:
Delta-Doped Layers of SiC Grown by 'Pulse Doping' Technique
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
247-250
DOI
10.4028/www.scientific.net/MSF.389-393.247
Citation
K. Takahashi, T. Yokogawa, M. Uchida, O. Kusumoto, K. Yamashita, R. Miyanaga, M. Kitabatake, "Delta-Doped Layers of SiC Grown by 'Pulse Doping' Technique", Materials Science Forum, Vols. 389-393, pp. 247-250, 2002
Online since
April 2002
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Price
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