Paper Title:
Epitaxial Growth of 4H-SiC with Hexamethyldisilane HMDS
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
263-266
DOI
10.4028/www.scientific.net/MSF.389-393.263
Citation
C. Sartel, V. Soulière, J. Dazord , Y. Monteil, I. El Harrouni, J. M. Bluet, G. Guillot, "Epitaxial Growth of 4H-SiC with Hexamethyldisilane HMDS", Materials Science Forum, Vols. 389-393, pp. 263-266, 2002
Online since
April 2002
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Price
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