Paper Title:
Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
267-270
DOI
10.4028/www.scientific.net/MSF.389-393.267
Citation
J. K. Jeong, M. Y. Um, H. J. Na, B. S. Kim, I. B. Song, H. J. Kim, "Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor", Materials Science Forum, Vols. 389-393, pp. 267-270, 2002
Online since
April 2002
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Price
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