Paper Title:
Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation Epitaxy
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
279-282
DOI
10.4028/www.scientific.net/MSF.389-393.279
Citation
T. Furusho, T. Miyanagi, Y. Okui, S. Ohshima, S. Nishino, "Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation Epitaxy", Materials Science Forum, Vols. 389-393, pp. 279-282, 2002
Online since
April 2002
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Price
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