Paper Title:
Effect of the Si Droplet Size on the VLS Growth Mechanism of SiC Homoepitaxial Layers
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
287-290
DOI
10.4028/www.scientific.net/MSF.389-393.287
Citation
G. Ferro, D. Chaussende, F. Cauwet, Y. Monteil, "Effect of the Si Droplet Size on the VLS Growth Mechanism of SiC Homoepitaxial Layers", Materials Science Forum, Vols. 389-393, pp. 287-290, 2002
Online since
April 2002
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Price
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