Paper Title:
Liquid-Phase Epitaxial Growth of Heavily Doped Al p-Type Contact Layers for SiC Devices and Resulting Ohmic Contacts
  Abstract

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Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
291-294
DOI
10.4028/www.scientific.net/MSF.389-393.291
Citation
A. Syrkin, V. Dmitriev, O. Kovalenkov, D. Bauman, J. Crofton, "Liquid-Phase Epitaxial Growth of Heavily Doped Al p-Type Contact Layers for SiC Devices and Resulting Ohmic Contacts", Materials Science Forum, Vols. 389-393, pp. 291-294, 2002
Online since
April 2002
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